IXYS Introduces the SS150 and SS275 High Power SiC Diodes
Fort Collins, CO, August 27, 2013 --- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of the SS150 and SS275 Series High Power Silicon Carbide (SiC) Diodes by its IXYS Colorado division. Three diode configurations provide designers with flexible connection and layout options. Packaged in our low inductance, surface mount DE Series package, these products provide excellent switching performance. The SS150 and SS275 are both available in 600V, 10A and 1200V, 5A ratings. Standard internal configurations include:
The SS150 and SS275 are both available in 600V, 10A and 1200V, 5A ratings. Standard internal configurations include:
- TI – Triple Independent – no common connections
- TA – Triple Anode – anodes are tied together
- TC – Triple Cathode – cathodes are tied together
The SS150 and SS275 High Power Diode SiC Modules are ideal for applications such as:
- MHz Switch Mode Power Supplies
- High-Frequency Converters
- Resonant Converters
- Rectifier Circuits
The use of Silicon Carbide allows extremely fast switching, high-frequency operation, with zero recovery and temperature independent behavior. Coupled with our low inductance RF package, these diodes can be utilized in any number of fast switching diode circuits or high-frequency converter applications.
SS150 & SS275 Features:
- Surface Mount Package
- 600V, 10A and 1200V, 5A
- Zero Forward Recovery
- High Frequency Operation
- Temperature Independent Behavior
- Low Inductance
- Positive Temperature Coefficient for Vf
“The SS150 and SS275 High Power SiC Diode Modules allow designers more flexible design options with high-frequency applications,” commented Stephen Krausse, General Manager of IXYS Colorado.
The SS150 and SS275 High Power SiC Diode Modules are available directly from IXYS Colorado (Directed Energy) Tel. (970) 493-1901, Fax (970) 232-3025, Email firstname.lastname@example.org, www.ixyscolorado.com or through your local authorized IXYS/IXYSRF sales representative.
IXYS Corporation develops and markets primarily high-performance power semiconductor devices that are used in controlling and converting electrical power efficiently in power systems for the telecommunication internet infrastructure, motor drives, medical systems, solar energy, wind energy, electrical generators, and transportation. IXYS also serves its markets with a combination of digital and analog integrated circuits, RF power products and power subsystems including application-specific, embedded system-on-chip (SoC) solutions for the industrial and consumer markets.
Safe Harbor Statement
Any statements contained in this press release that are not statements of historical fact, including the performance, rating, availability, reliability, operation, and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Form 10-Q for the quarter ended December 30, 2012. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.