IXYS Colorado Introduces the IXZ631 Series Integrated High-Speed Gate Driver/MOSFET RF Modules

IXYS Colorado Introduces the IXZ631 Series Integrated High-Speed Gate Driver/MOSFET RF Modules

FORT COLLINS, Colo., Feb. 18 2014---IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced today the introduction of its IXZ631 Series CMOS high-speed, high-current integrated gate driver and MOSFET modules by its IXYS Colorado division. The modules are specifically designed for Class D, E, HF and RF applications at up to 27 MHz, as well as other applications requiring high-speed, high-power switching.

The IXZ631 modules feature the IXRFD630 high-speed gate driver paired with an RF power MOSFET, packaged in IXYSRF’s DE-Series low-inductance surface mount RF package, incorporating layout techniques to minimize stray lead inductance for optimum switching performance. Designed with small internal delays, the modules are suitable for high-power operation where combiners are used. Their features and wide safety margin in operating voltage and power make the modules unmatched in performance and value.

Two devices are available, the IXZ631DF12N100 1,000 volt 12 ampere device and the 500 volt 18 ampere IXZ631DF18N50. Both modules produce voltage rise and fall times of less than 5 nanoseconds, and minimum pulse widths of 8 nanoseconds. In pulsed mode, the 500 volt module provides up to 95 amperes of peak current; the 1,000 volt module provides 72 amperes.

IXZ631 Series Features
  • Isolated Substrate
  • High isolation voltage (in excess of 2500 V)
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • Low RDS(ON)
  • Very low insertion inductance
  • No Beryllium Oxide (BeO)
  • Latch-up protected
  • Kelvin ground connection on the input side to avoid problems with ground bounce
  • Low quiescent supply current
  • RoHS compliant
IXZ631 Series Advantages
  • Optimized for RF and high-speed switching
  • Easy to mount, no insulators needed
  • High-power density
  • Single package reduces size and heat sink area

“We are excited to release the next generation RF module for power applications. Featuring the high-speed IXRFD631 driver and IXYSRF power MOSFET in a single low-inductance package offers an excellent combination of power, size and performance,” commented Stephen Krausse, General Manager of IXYS Colorado.

Safe Harbor Statement

Any statements contained in this press release that are not statements of historical fact, including the performance, rating, availability, reliability, operation and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Form 10-Q for the fiscal quarter ended December 31, 2014. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.