Application Guides

Application Guides

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Title Description Issue Date View/Download
IXZ631DF18N50 13.56MHz Application Note The IXZ631DF18N50 ultra-fast RF power module combines an IXRFD631 driver and IXZ318N50L MOSFET into one package, decreasing both the footprint size and the parts count on a PCB. In addition, there is up to 25% cost savings over using separate packages. 2017

IXZ631DF12N100 27.12 MHz Application Note The IXZ631DF12N100 ultra-fast RF power module combines an IXRFD631 driver and DE375-102N12A MOSFET into one package, decreasing both the footprint size and the parts count on a PCB. In addition, there is up to 25% cost savings over using separate packages. 2017

RF Power Capabilities of the IXRFD615X2 MOSFET Gate Driver in a Resonant Full-Bridge Configuration The dual 15 A MOSFET driver is evaluated in a resonant full-bridge circuit to compare operation against an operating the previous-generation DEIC420 MOSFET gate driver in a resonant half-bridge circuit.

Simulations for both full-bridge and half-bridge configurations are presented to complement and verify circuit operation. This circuit can also be used as a medium-power RF source for applications where a compact RF source is required.

2017

RF Power Definitions Technician Note 003 Manufacturers and customers do not always use the same power definitions for their applications. This application note provides definitions for commonly used RF power terms. 2013

P1dB and P3dB Definitions Technician Note 002 P1dB, the output power at 1 dB compression, is typically used when referring to amplifiers. It is defined as the output power level at which the actual gain deviates from the small signal gain by 1 dB. Similarly, P3dB is the power level at which actual gain deviates from small signal gain by 3 dB. 2013

Gate Charge Technician Note 001 Gate charge is a parameter that can be used to estimate MOSFET turn-on time if the gate current is known, or estimate the gate current required for a desired turn-on time. This parameter is dependent on drain voltage and temperature. 2013

DEIC420 and IXDD415 SPICE Model This application note describes a PSpice model for the DEIC420 and IXDD415 gate driver ICs. 2003

DE Series MOSFET and Driver Installation and Mounting Instructions The DE-Series MOSFETs or ICs may be mounted in three different configurations, depending upon the application and power dissipation required. This document refers to MOSFET mounting, however these mounting instructions also apply to the gate drive ICs packaged in the DE Series packages. 2003

Thermal Resistance and Power Dissipation The thermodynamics of power semiconductor devices can be complex and confusing. The following article will present two sets of the most important specifications in this area, the thermal resistance (Rθ) and the power dissipation (PD). 2003

PRF-1150 1 kW 13.56 MHz Class E RF Generator Evaluation Module The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the IXRFD630 RF MOSFET gate driver IC and DE275X2-102N06A RF MOSFET in a practical 13.56 MHz RF generator application. It is all-inclusive, pre-tested, and ready to operate. 2002

RF Power Capabilities of the DEIC420 MOSFET Driver IC at 3.6, 7, 10 and 14 MHz The DEIC420 MOSFET driver IC is evaluated as a “stand-alone” RF source at 3.6, 7, 10, and 14 MHZ. To create up to 47W of CW RF all that is required is a clock oscillator, RF resonant tank, and associated output matching circuitry. This module can be used as a medium power RF source for amateur radio use, a laboratory RF source, a source of sine wave gate drive, and many other applications where a compact RF source is required.

NOTE: The DEIC420 has been discontinued, replaced by the IXRFD630 CMOS Gate Driver. This application note is for reference purposes only.

2002

An Introduction to the DE-Series Fast Power MOSFET The DE-SERIES Fast PowerTM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high frequency, high power applications. This technical note describes the patented technology utilized to achieve and optimize the electrical, thermal and mechanical performance of the DE-SERIES devices. 2002

3kW and 5kW Half-Bridge Class D RF Generators at 13.56 MHz with 89% Efficiency and Limited Frequency Agility DEI / IXYS has developed an RF generator design for very high power at an ISM frequency. of 13.56MHz, using a pair of DE375-102N12A MOSFETs driven by DEIC420 gate drive ICs, in a half-bridge operating in Class-D with limited frequency agility, to generate 3kW of output power at 83.5% efficiency. A pair of modules generates 5KW at 89% efficiency using a total of four DE375-102N12A RF MOSFETs. This technical note discusses the design of this RF generator and supporting SPICE models. 2002

MOSFET and IGBT Drivers - Theory and Applications Although sufficient literature is available on characteristics of MOSFETs and IGBTs, practical aspects of driving them in specific circuit configurations at different power levels and at different frequencies require that design engineers pay attention to a number of aspects. An attempt is made here to review this subject with some illustrative examples with a view to assist both experienced design engineers and those who are just initiated into this discipline. 2001

Reference Design for 13.56 MHz Push-Pull 600 Watt RF Amplifier This application note describes an evaluation circuit for the IXZ318N50L Ultra Fast ZMOS Series RF MOSFET in a class AB topology producing 600 watts CW at a frequency of 13.56 MHz.

The Destructive Effects of Kelvin Leaded Packages in High Speed, High Frequency Operation Today power MOSFET die technology is not the only limiting factor in achieving the high switching speeds and higher frequencies targeted as goals by the RF and HF power communities. The choice of the package is often the fundamental cause of most of the problems found when attempting to operate power MOSFETs at high switching speeds and high frequencies. These problems can appear as unstable operation in the most benign conditions and as an unexplained failure and radically reduced reliability in the worst cases. This paper explores in detail the impact of intermediate speed enhancement techniques, such as the Kelvin lead, without commensurate attention to other stray inductive terms. 1998

IXYSRF 2-30Mhz App Note This application note describes an evaluation circuit highlighting the IXYSRF IXZ210N50L, IXZ2210N50L, and IXZH10N50L Ultra Linear RF MOSFETs. These devices are available in our low inductance RF package as a single or dual die and in the industry-standard TO-247 package. The circuit operates in the ISM and HF bands from 2 to 30 MHz utilizing class AB topology, producing 250 to 400 watts CW. The operating efficiency is greater than 50% for the frequency coverage, with a minimum power gain of 18.5 dB ±1 dB. This evaluation board and application note are to assist engineers in evaluating our components and to serve as a reference design for industrial, commercial, scientific, and HF RF amplifier applications.