N-Channel Enhancement Mode MOSFET optimized for RF and high speed switching at frequencies to >100MHz

Vdss = 200V
Id25 = 9A
Pdc = 200W

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The DE-SERIES Fast Power MOSFETs are a new class of unique high-power devices designed as a circuit element from the ground up for high speed, high frequency, high power applications. DEI’s Fast Power TM technology features low insertion inductance (≈2nH), and a low profile low-cost plastic package, with a RthJC as low as 0.08ºC/W, which provides exceptional switching speeds and power handling capabilities.

The DE-SERIES offer 10 times the speed and 3 times the power dissipation, with 1/2 the volume, 1/3 the weight and greatly reduced die stress, of comparable conventional power MOSFET devices.

The DE-SERIES employs the most electrically, mechanically and thermally advanced high-speed device design available today. The combination of silicon die and packaging make the DE-SERIES the device of choice for high power, high-speed applications.

  • Isolated Substrate
    • high isolation voltage (>2500V)
    • excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances
    • easier to drive
    • faster switching
  • Low RDS(ON)
  • Very low insertion inductance
  • No Beryllium Oxide (BeO) or other hazardous materials

Switching Speed: ≤HF, RF MOSFET devices and ≈5 -10 times faster than conventional MOSFETs.

Frequency: Equal to many HF, RF devices and at least 5-10 times higher than conventional MOSFETs.

High gain: Approximately 3 times higher than HF, RF MOSFET devices.

Power Dissipation: Approximately twice that of HF, RF MOSFET devices and over 3 times higher than conventional MOSFET devices.

High Power Surface mount design: This allows the device to be loaded on to the PCB with all the other components in a high or low power configuration, simplifying mechanical assembly of the system.

Lowered Mechanical Stress: The device floats on the thermal compound such that the mounting hardware will not induce further package stress.

Low Inductance Packaging: The DE-SERIES has the lowest insertion inductance of any equivalent power device.

Economical High Power Mounting: The mounting configuration does not require machining of the PCB or an expensive clamping mechanism.

  • Class C, D, and E High Power Generators
  • RF Power Amplifiers
  • High-Frequency SMPS
  • Induction Heating
  • Laser Diode Drivers
  • High-Speed Pulse Generators
Vdss - (Drain to Source Voltage - V)


Id - (Drain Current - A)


Rdson - (Resistance - Ω)


Ciss - (Input Capacitance - pF)






Application Guides
Product Notifications
Or Copy & Paste Below

.SUBCKT 201N09A 10 20 30
* 200 Volt 9 Amp .4 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 .6N
RD 4 1 .4
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=500 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=500 M=.3 VJ=.4 TT=400N RS=10M)