IXFT6N100F

N-Channel Enhancement Mode MOSFET

  • VDSS = 1000V
  • ID25 = 6A
  • PDC = 180W
  • IXFT TO-268 surface mount package

See related products below for other package options.

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The F SERIES N Channel Power MOSFETs are RF cable devices in industry standard packaging. If the RF performance does not require the advanced characteristics of our DE-SERIES devices, the F-SERIES can then provide a more economical, lower cost design solution for your application.

Features
  • RF Capable
  • Double metal process for low gate resistance
  • Unclamped Inductive Switching (UIS) rate
  • Low package inductance
  • Fast intrinsic rectifier
Advantages
  • Space savings
  • High power density
Applications
  • Switch and resonant mode DC-DC converters
  • Laser drivers
  • Pulse generators
  • RF power amplifiers

Vdss - (Drain to Source Voltage - V)

1000

Id - (Drain Current - A)

6

Rdson - (Resistance - Ω)

1.9

Ciss - (Input Capacitance - pF)

1870

Mode

Switching

Package

TO-268

Datasheet