The IXRFD615X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Push-Pull and Class E Push-Pull HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.
The IXRFD615X2 can source and sink 15 A of peak current per driver while producing voltage rise and fall times of less than 10 ns and minimum pulse widths of 8 ns. The inputs to the driver are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD615X2 unmatched in performance and value.
The surface mount IXRFD615X2 is packaged in a low-inductance RF package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance. The two drivers are constructed on a single substrate sharing a common ground via the substrate and therefore are not capable of ground isolated operation from each other. An example would be a half-bridge which requires a high-side floating and a ground referenced driver, which is not suitable, as compared to a push-pull configuration in which both drivers are ground referenced, making it a suitable application.
- Isolated substrate
- High isolation voltage (>2500 V)
- Excellent thermal transfer
- Increased temperature and power cycling capability
- High Peak Sink and Source Current
- Low Output Impedance
- No Beryllium Oxide (BeO) or other hazardous materials
- Latch-up protected
- Low quiescent supply current
- Optimized for RF and high speed
- Easy to mount, no insulators needed
- High power density
- RoHS compliant
- RF MOSFET Driver
- Push-Pull RF Generators
- Multi-MHz Switch Mode Supplies
- Pulse Transformer Driver
- Pulse Laser Diode Driver
- Pulse Generator