IXRFDSM607X2

15A Dual Low-Side RF MOSFET Gate Driver

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The IXRFDSM607X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

The IXRFDSM607X2 can source and sink 7 A of peak current per driver, 15 A when combined, while producing voltage rise and fall times of less than 5 ns and minimum pulse widths of 8 ns. The inputs of the driver are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range.

Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFDSM607X2 unmatched in performance and value.

The surface mount IXRFDSM607X2 is packaged in a low-inductance surface mount package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance. The input and output pins can be separated or combined for dual or single driver operation. However, both sides are ground referenced together and cannot be operated ground isolated from each other..

Features
  • High Peak Output Current
  • Low Output Impedance
  • Low Quiescent Supply Current
  • Low Propagation Delay
  • High Capacitive Load Drive Capability
  • Wide Operating Voltage Range
  • Single or Dual Driver Operation Capable
Advantages
  • Optimized for RF and high speed
  • Easy to mount, no insulators needed
  • High power density
  • RoHS compliant
Applications
  • RF MOSFET Driver
  • Class D and E RF Generators
  • Multi-MHz Switch Mode Power Supplies
  • Pulse Transformer Drivers
  • Pulse Laser Diode Drivers
  • Pulse Generators
Ipeak (A)

15

tr - (risetime ns)

5

tf - (falltime ns)

5

PWmin - (Minimum Pulse Width - ns)

8

Package

SMPD

Datasheet
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