IXRFFB12205

Silicon Carbide Full Wave Bridge Rectifier
1200 V
5 A

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The IXRFFB12205 is a 1200 V, 5 A silicon carbide diode full bridge rectifier packaged in IXYSRF’s low-inductance RF package incorporating layout techniques to minimize stray lead inductances for optimum performance. The benefits of silicon carbide include faster operation due to the minimal reverse recovery from only the stored charge of the junction capacitance. The IXRFFB12205 takes advantage of silicon carbide’s high surge current capability and is mounted in our RF package, to provide exceptional thermal resistance properties that enhance high-frequency operation. It is a surface-mountable device.
Features
  • Silicon carbide Schottky diodes
    • No reverse recovery for soft turn-off
    • Temperature independent switching behavior
    • Low leakage current
  • Easy to mount, no insulators needed
  • High power density
  • Isolated substrate
    • High isolation voltage
    • Excellent thermal transfer
    • Increased temperature and power cycling capability
  • Very low insertion inductance
  • No Beryllium Oxide (BeO) or other hazardous materials
  • RoHS compliant
Advantages
  • Optimized for high speed
  • Easy to mount, no insulators needed
  • High power density
Applications
  • Output rectifier for high-frequency power converters
  • General high-speed rectifier circuits

 

Diode Configuration

Full Bridge Rectifier

Vrrm (V)

1200

Ifavg (A)

5

Cj (Junction Capacitance - pF)

65

Mode

Switching

Package

DE-275

Datasheet
Application Guides