IXZ318N50

N-Channel Enhancement Mode MOSFET

VDSS = 500V
ID25 = 19A
PDC = 880W
Package- DE375
Designed for low capacitance and optimized for RF and high speed switching

Categories: ,

The DE-SERIES and ISOPLUS247 Linear Z-MOS MOSFETs are a class of unique high-power devices designed for low capacitance and high-frequency linear operation in class AB and class C type topologies. DEI’s Fast Power TM technology features low insertion inductance (≈2nH), and a low profile low-cost plastic package, with a RthJC as low as 0.08ºC/W, which provides exceptional switching speeds and power handling capabilities.

The DE-SERIES offer 10 times the speed and 3 times the power dissipation, with half the volume, one-third the weight and greatly reduced die stress, of comparable conventional power MOSFET devices. It also employs the most electrically, mechanically and thermally advanced high-speed device design available today. The combination of silicon die and packaging make the DE-SERIES the device of choice for high power linear RF applications.

The ISOPLUS247 offers the performance of the DE Series linear Z-MOS MOSFET but with the convenience of industry standard packaging. This offers a lower cost alternative for designs that do not demand the performance level of the DE-SERIES. Multiple lead configurations aids in circuit board layout with the ability to place power leads and traces closer to each other, minimizing circuit board inductance.

Features
  • Isolated substrate
    • high isolation voltage (>2500V)
    • excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Designed for low capacitance and gate charge.
  • Very low insertion inductance (No Beryllium Oxide (BeO) used or other hazardous materials
  • Also available in industry standard ISOPLUS247 packaging with multiple lead configurations
Advantages

Frequency: Equal to many HF, RF devices.

Gain: Designed for bias stability at high operating voltages.

Power Dissipation for DE Series: Approximately twice that of HF, RF MOSFET devices and over 3 times higher than conventional MOSFET devices.

High Power Surface mount design: This allows the device to be loaded on to the PCB with all the other components in a high or low power configuration, simplifying mechanical assembly of the system.

Lowered Mechanical Stress: The device floats on the thermal compound such that the mounting hardware will not induce further package stress.

Low Inductance Packaging: The DE-SERIES has the lowest insertion inductance of any equivalent power device.

Economical High Power Mounting: The mounting configuration does not require machining of the PCB or an expensive clamping mechanism.

Applications

Class A, AB, and C RF Power Amplifiers


Vdss - (Drain to Source Voltage - V)

500

Id - (Drain Current - A)

19

Rdson - (Resistance - Ω)

0.32

Ciss - (Input Capacitance - pF)

1950

Mode

Switching

Package

DE-375

Datasheet
Application Guides