The DE-SERIES and ISOPLUS247 Linear Z-MOS MOSFETs are a class of unique high-power devices designed for low capacitance and high-frequency linear operation in class AB and class C type topologies. DEI’s Fast Power TM technology features low insertion inductance (≈2nH), and a low profile low-cost plastic package, with a RthJC as low as 0.08ºC/W, which provides exceptional switching speeds and power handling capabilities.
The DE-SERIES offer 10 times the speed and 3 times the power dissipation, with half the volume, one-third the weight and greatly reduced die stress, of comparable conventional power MOSFET devices. It also employs the most electrically, mechanically and thermally advanced high-speed device design available today. The combination of silicon die and packaging make the DE-SERIES the device of choice for high power linear RF applications.
The ISOPLUS247 offers the performance of the DE Series linear Z-MOS MOSFET but with the convenience of industry standard packaging. This offers a lower cost alternative for designs that do not demand the performance level of the DE-SERIES. Multiple lead configurations aids in circuit board layout with the ability to place power leads and traces closer to each other, minimizing circuit board inductance.
- Isolated substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power cycling capability
- IXYS advanced low Qg process
- Designed for low capacitances and gate charge
- easier to drive
- faster switching
- Very low insertion inductance
- No Beryllium Oxide (BeO) used or other hazardous materials
- Also available in industry standard ISOPLUS247 packaging with multiple lead configurations
- Also available in our high performance DE Package
Switching Speed: HF, RF MOSFET devices that are 5 -10 times faster than conventional MOSFETs
Frequency: Equal to many HF, RF devices and at least 5-10 times higher than conventional MOSFETs.
High gain: Approximately 3 times higher than HF, RF MOSFET devices.
Power Dissipation: Approximately twice that of HF, RF MOSFET devices and over 3 times higher than conventional MOSFET devices.
High Power Surface mount design: This allows the device to be loaded onto the PCB with all the other components in a high or low power configuration, simplifying mechanical assembly of the system.
Lowered Mechanical Stress: The device floats on the thermal compound such that the mounting hardware will not induce further package stress.
Low Inductance Packaging: The DE-SERIES has the lowest insertion inductance of any equivalent power device.
Economical High Power Mounting: The mounting configuration does not require machining of the PCB or an expensive clamping mechanism.
Class C, D, and E High Power Generators
RF Power Amplifiers
Laser Diode Drivers
High-Speed Pulse Generators