SS150TI60110

Silicon Carbide (SiC) Schottky Diode
Triple Independent
600 V
10 A

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Three 600 V, 10 A Silicon Carbide Schottky diodes mounted on a common Aluminum Nitride substrate in the DE150 surface mount package. The SS150TI60110 is a triple independent device with no common connections. The electrically isolated, low inductance DE150 package also provides reduced thermal resistance for increased power handling.

Features
  • 600 V SiC Schottky Diode
  • Surface Mount Package
  • Zero Reverse Recovery
  • Zero Forward Recovery
  • High Frequency Operation
  • Temperature Independent Behavior
  • Positive Temperature Coefficient for VF
Advantages
  • Increased overall system efficiency compared to Silicon diodes
  • Reduced cooling requirements
  • High frequency capable
  • Reduction in EMI
  • Increased reliability due to lower operating temperatures
Applications
  • MHz Switch Mode Power Supplies
  • High Frequency Converters
  • Resonant Converters
  • Rectifier Circuits

 

Diode Configuration

Triple Independent

Vrrm (V)

600

Ifavg (A)

10

Cj (Junction Capacitance - pF)

80

Mode

Switching

Package

DE-150

Datasheet
Application Guides