SS275TA12205

Silicon Carbide (SiC) Schottky Diode
Triple Independent
1200 V
5 A

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Three 1200 V, 10 A Silicon Carbide Schottky diodes mounted on a common Aluminum Nitride substrate in the DE275 surface mount package. The SS275TI12205 is a triple anode device with all three anodes tied together. The electrically isolated, low inductance DE275 package also provides reduced thermal resistance for increased power handling.

Features
  • 1200 V SiC Schottky Diode
  • Surface Mount Package
  • Zero Reverse Recovery
  • Zero Forward Recovery
  • High Frequency Operation
  • Temperature Independent Behavior
  • Positive Temperature Coefficient for VF
Advantages
  • Increased overall system efficiency compared to Silicon diodes
  • Reduced cooling requirements
  • High frequency capable
  • Reduction in EMI
  • Increased reliability due to lower operating temperatures
Applications
  • MHz Switch Mode Power Supplies
  • High Frequency Converters
  • Resonant Converters
  • Rectifier Circuits

 

Diode Configuration

Triple Common Anode

Vrrm (V)

1200

Ifavg (A)

5

Cj (Junction Capacitance - pF)

65

Mode

Switching

Package

DE-275

Datasheet
Application Guides